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Improvement of the Kink-free Operation in Ridge-waveguide Laser Diodes Due to Coupling of the Optical Field to the Metal Layers Outside the Ridge

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Date

2003

Authors

Buda, Manuela
Fu, Lan
Josyula, L
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The kink-free output power in 980-nm emitting laser diodes can be increased by 30%-50% in ridge-waveguide devices when the thickness of the oxide is decreased such that the optical field is allowed to interact with the lossy Ti-PtAu metallization outside

Description

Keywords

Keywords: Continuous wave lasers; Etching; Laser beams; Light absorption; Light emission; Light scattering; Metallizing; Ohmic contacts; Optical waveguides; Refractive index; Semiconductor doping; Semiconductor quantum wells; Kink free operation; Optical field dist High-power diode lasers; Semiconductor lasers; Single-mode semiconductor lasers

Citation

URI

http://hdl.handle.net/1885/87726

Collections

ANU Research Publications

Source

IEEE Photonics Technology Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/LPT.2003.819756

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