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Thermal Stability of Ion-implanted Hydrogen in ZnO

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Date

2002

Authors

Ip, K
Overberg, M E
Heo, Y W
Norton, D P
Pearton, S J
Kucheyev, Sergei
Jagadish, Chennupati
Williams, James
Wilson, R G
Zavada, J M

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

An investigation of thermodynamic stability of ion-implanted hydrogen in ZnO was presented. Secondary ion mass spectrometry was used for the analysis. Rutherford backscattering/channeling of samples implanted with 1H showed no change in backscattering yield near the ZnO surface. It was found by cathodoluminescence and photoluminescence studies that the intensity of the near gap emission from ZnO is reduced more than two orders of magnitude from the values in unimplanted samples.

Description

Keywords

Keywords: Annealing; Cathodoluminescence; Hydrogen; Ion implantation; Mass spectrometry; Photoluminescence; Rutherford backscattering spectroscopy; Single crystals; Thermodynamic stability; Channeling; Zinc oxide

Citation

URI

http://hdl.handle.net/1885/71936

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1524033

Restricted until

2037-12-31

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