Effect of Sn Addition on Epitaxial GaAs Nanowire Grown at Different Temperatures in Metal-Organic Chemical Vapor Deposition
Date
2019
Authors
Gao, Han
Sun, Qiang
Lysevych, Mykhaylo
Tan, Hark Hoe
Jagadish, Chennupati
Zou, Jin
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Publisher
American Chemical Society
Abstract
In this study, we investigated the growth
behaviors of GaAs nanowires with tetraethyl-tin (Sn) as
addition grown at different temperatures in a metal−organic
chemical vapor deposition system. It was found that the
nanowire axial growth rate can be influenced by the addition
of Sn in opposite ways at different growth temperatures. The
growth rate of nanowires is higher because of the enhanced
decomposition of trimethyl gallium (TMGa) with increasing
the Sn addition at 390 °C while lower because of the lower
catalyst supersaturation level with increasing the Sn addition
at 450 °C. With the Sn addition, nanowire quality can be maintained at 390 °C because the lower temperature benefits
stabilizing the structure but further degraded at 450 °C when compared with intrinsic nanowires. This study provides an insight
into the effect of the Sn addition on GaAs nanowire growth, which will be useful for the design of nanowire-based devices.
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Crystal Growth & Design
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Journal article
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2037-12-31
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