Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films
Date
2012
Authors
He, Xiliang
Li, Xiaomin
Gao, Xiangdong
Yu, Weidong
Yang, Rui
Liu, Xinjun
Cao, Xun
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Springer
Abstract
Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2O 5 films with the device structure of Pt/Ti-Ta 2O 5/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Tidoped Ta 2O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta 2O 5 thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O-vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.
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Keywords: Applied voltages; Conductive filaments; Constant stress; Device structures; High-resistance state; Low resistance; Low-resistance state; Polycrystalline Ta; Resistance switching; Resistance switching effect; Retention properties; Ti addition; Platinum; Sw
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Source
Applied Physics A: Materials Science and Processing
Type
Journal article
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2037-12-31
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