Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films

Date

2012

Authors

He, Xiliang
Li, Xiaomin
Gao, Xiangdong
Yu, Weidong
Yang, Rui
Liu, Xinjun
Cao, Xun

Journal Title

Journal ISSN

Volume Title

Publisher

Springer

Abstract

Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta 2O 5 films with the device structure of Pt/Ti-Ta 2O 5/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Tidoped Ta 2O 5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta 2O 5 thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O-vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.

Description

Keywords

Keywords: Applied voltages; Conductive filaments; Constant stress; Device structures; High-resistance state; Low resistance; Low-resistance state; Polycrystalline Ta; Resistance switching; Resistance switching effect; Retention properties; Ti addition; Platinum; Sw

Citation

Source

Applied Physics A: Materials Science and Processing

Type

Journal article

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2037-12-31