Optical Study of p-Doping in GaAs Nanowires for Low-Threshold and High-Yield Lasing

Date

2018-12-07

Authors

Alanis, Juan Arturo
Lysevych, Mykhaylo
Burgess, Timothy
Saxena, Dhruv
Mokkapati, Sudha
Skalsky, Stefan
Tang, Xiaoyan
Mitchell, Peter
Walton, Alex
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

American Chemical Society

Abstract

Semiconductor nanowires suffer from significant non-radiative surface recombination; however, heavy p-type doping has proven to be a viable option to increase the radiative recombination rate and, hence, quantum efficiency of emission, allowing the demonstration of room-temperature lasing. Using a large-scale optical technique, we have studied Zn-doped GaAs nanowires to understand and quantify the effect of doping on growth and lasing properties. We measure the non-radiative recombination rate (knr) to be (0.14 ± 0.04) ps–1 by modeling the internal quantum efficiency (IQE) as a function of doping level. By applying a correlative method, we identify doping and nanowire length as key controllable parameters determining lasing behavior, with reliable room-temperature lasing occurring for p ≳ 3 × 1018 cm–3 and lengths of ≳4 μm. We report a best-in-class core-only near-infrared nanowire lasing threshold of ∼10 μJ cm–2, and using a data-led filtering step, we present a method to simply identify subsets of nanowires with over 90% lasing yield.

Description

Keywords

III−V nanowire lasers, PL, doping

Citation

Source

Nano Letters

Type

Journal article

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Restricted until

2037-12-31