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Quantitative dopant distributions in GaAs nanowires using atom probe tomography

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Date

2013

Authors

Du, S.
Burgess, Timothy
Gault, B.
Gao, Qiang
Bao, Peite
Li, Li
Cui, Xiangyuan
Yeoh, Wai Kong
Liu, Hong-Wei
Yao, Lan

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimens

Description

Keywords

Keywords: Atom probe tomography; Atomic-resolution; Chemical sensitivity; Dopant distribution; Elemental mapping; Growth substrates; Reconstruction method; Semiconductor nanowire; Doping (additives); Semiconductor growth; Nanowires; nanowire; article; atom probe to Atom probe tomography; Dopants; Nanowires

Citation

URI

http://hdl.handle.net/1885/73859

Collections

ANU Research Publications

Source

Ultramicroscopy

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.ultramic.2013.02.012

Restricted until

2037-12-31

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Description
01_Du_Quantitative_dopant_2013.pdf (4.26 MB)

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