Contact-induced defect propagation in ZnO
Date
2002-06-17
Authors
Bradby, J. E.
Kucheyev, S. O.
Williams, J. S.
Jagadish, C.
Swain, M. V.
Munroe, P.
Phillips, M. R.
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American Institute of Physics (AIP)
Abstract
Contact-induced damage has been studied in single-crystal (wurtzite) ZnO by cross-sectional transmission electron microscopy (XTEM) and scanning cathodoluminescence(CL) monochromatic imaging. XTEM reveals that the prime deformation mechanism in ZnO is the nucleation of slip on both the basal and pyramidal planes. Some indication of dislocation pinning was observed on the basal slip planes. No evidence of either a phase transformation or cracking was observed by XTEM in samples loaded up to 50 mN with an ∼4.2 μm radius spherical indenter. CL imaging reveals a quenching of near-gap emission by deformation-produced defects. Both XTEM and CL show that this comparatively soft material exhibits extensive deformation damage and that defects can propagate well beyond the deformed volume under contact. Results of this study have significant implications for the extent of contact-induced damage during fabrication of ZnO-based (opto)electronic devices.
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Keywords: Basal slip; Cross-sectional transmission electron microscopy; Defect propagation; Deformation mechanism; Dislocation pinning; Electronic device; Monochromatic imaging; Phase transformation; Pyramidal planes; Soft material; Spherical indenters; Wurtzites;
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Applied Physics Letters
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Journal article
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