Orientation Dependent Ion Beam Mixing of Ta/Si Interfaces

Date

Authors

Berky, W

Gottschalk , S

Elliman, Robert

Balogh, A G

Publisher

Elsevier

Abstract

Ta/Si interfaces were systematically studied concerning ion beam mixing effects. Tantalum was evaporated on silicon of (1 0 0) and (1 1 1) orientation using the molecular beam epitaxy (MBE) method. The samples were then irradiated with 1.85 MeV and 6 MeV

Keywords

Keywords: Atomic force microscopy; Interfaces (materials); Molecular beam epitaxy; Rutherford backscattering spectroscopy; Tantalum; Thin films; Ballistic mixing; Ion beam mixing; Radiation enhanced diffusion; Thermal spike effects; Ion beams Ion beam mixing; Molecular beam epitaxy; Radiation enhanced diffusion; Rutherford backscatering spectroscopy; Thin films

URI

http://hdl.handle.net/1885/24036

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2006.03.114

Restricted until

2037-12-31

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File

Description

01_Berky_Orientation_Dependent_Ion_Beam_2006.pdf (264.35 KB)