Segregation and precipitation of Er in Ge

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dc.contributor.authorKucheyev, S. O.
dc.contributor.authorBradby, J. E.
dc.contributor.authorRuffell, S.
dc.contributor.authorLi, C. P.
dc.contributor.authorFelter, T. E.
dc.contributor.authorHamza, A. V.
dc.date.accessioned2015-12-15T05:53:34Z
dc.date.available2015-12-15T05:53:34Z
dc.date.issued2007-05-29
dc.date.updated2016-02-24T11:43:08Z
dc.description.abstractAlthough Er-doped Genanomaterials are attractive for photonic applications, very little is known about the basic properties of Er in Ge. Here, the authors study the annealing behavior of Geimplanted with keV Er ions to doses resulting in ≲1at.% of Er. Large redistribution of Er, with segregation at the amorphous/crystalline interface, starts at ≳500°C, while lower temperatures are required for material recrystallization. However, even at 400°C, Er forms precipitates. The concentration of Er trapped in the bulk after recrystallization decreases with increasing temperature but is independent of the initial bulk Er concentration for the range of ion doses studied here.
dc.description.sponsorshipWork at the ANU was supported by the ARC.en_AU
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95032
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/12/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.2743881
dc.sourceApplied Physics Letters
dc.subjectKeywords: Doping (additives); Erbium; Germanium; Interfaces (materials); Recrystallization (metallurgy); Crystalline interface; Photonic applications; Nanostructured materials
dc.titleSegregation and precipitation of Er in Ge
dc.typeJournal article
local.bibliographicCitation.issue22en_AU
local.bibliographicCitation.lastpage3
local.bibliographicCitation.startpage221901en_AU
local.contributor.affiliationKucheyev, Sergei O, Lawrence Livermore National Laboratory, United States of Americaen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationLi, Chi, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationFelter, T E, Lawrence Livermore National Laboratory, United States of Americaen_AU
local.contributor.affiliationHamza, A V, Lawrence Livermore National Laboratory, United States of Americaen_AU
local.contributor.authoruidu9908195en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor100799en_AU
local.identifier.ariespublicationu8709800xPUB75en_AU
local.identifier.citationvolume90en_AU
local.identifier.doi10.1063/1.2743881en_AU
local.identifier.scopusID2-s2.0-34249899658
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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