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Dielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells

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dc.contributor.authorTurner, Samuel (Sam)en_AU
dc.contributor.authorMokkapati, Sudhaen_AU
dc.contributor.authorJolley, Gregen_AU
dc.contributor.authorFu, Lanen_AU
dc.contributor.authorJagadish, Chennupatien_AU
dc.contributor.authorTan, Hark Hoeen_AU
dc.coverage.spatialMelbourne Australia
dc.date.accessioned2015-12-10T22:55:14Z
dc.date.createdDecember 12-14 2012
dc.date.issued2012
dc.date.updated2016-02-24T10:19:28Z
dc.description.abstractThe enhancement in short-circuit current density (Jsc) provided by a TiO2 diffraction grating composed of rectangular strips at the rear of an In0.21Ga0.79As-GaAs quantum well solar cell (QWSC) is investigated using finite-difference time-domain (FDTD) simulations. Optimisation of the grating height, periodicity and fill-factor yielded an enhancement of 5.3% in Jsc over the reference cell.
dc.identifier.isbn9781467330459
dc.identifier.urihttp://hdl.handle.net/1885/60016
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE Inc)
dc.relation.ispartofseriesConference on Optoelectronic and Microelectronic Materials and Devices (COMMAD 2012)
dc.sourceCOMMAD 2012 Proceedings
dc.source.urihttp://commad2012.physics.unimelb.edu.au/
dc.subjectKeywords: Dielectric diffraction gratings; Fill-factor; Finite-difference time-domain simulation; GaAs quantum wells; Light-trapping; Optimisations; Quantum well solar cells; Rectangular strips; Diffraction; Finite difference time domain method; Gallium arsenide; M
dc.titleDielectric Diffraction Gratings for Light-Trapping in InGaAs-GaAs Quantum Well Solar Cells
dc.typeConference paper
local.bibliographicCitation.lastpage130
local.bibliographicCitation.startpage129
local.contributor.affiliationTurner, Samuel (Sam), College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMokkapati, Sudha, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJolley, Greg, University of Western Australia
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.authoruidTurner, Samuel (Sam), u4817641
local.contributor.authoruidMokkapati, Sudha, u2576041
local.contributor.authoruidFu, Lan, u9715386
local.contributor.authoruidTan, Hoe Hark, u9302338
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor091203 - Compound Semiconductors
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB518
local.identifier.doi10.1109/COMMAD.2012.6472394
local.identifier.scopusID2-s2.0-84875612159
local.identifier.thomsonID000318906500003
local.type.statusPublished Version

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