Optical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion-implantation into SiO2

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dc.contributor.authorHylton, N. P.
dc.contributor.authorCrowe, I. F.
dc.contributor.authorKnights, Andrew P.
dc.contributor.authorHalsall, M. P.
dc.contributor.authorRuffell, Simon
dc.contributor.authorGwilliam, R.
dc.contributor.editorKubby, Joel A.
dc.contributor.editorReed, Graham T.
dc.coverage.spatialSan Francisco USA
dc.date.accessioned2020-12-20T20:58:56Z
dc.date.available2020-12-20T20:58:56Z
dc.date.createdJanuary 2010
dc.date.issued2010
dc.date.updated2020-12-13T07:24:30Z
dc.description.abstractWe present the results of an optical investigation of a series of Er doped silicon nanocrystal (Si-NC) samples which were fabricated via ion implantation into SiO2 on sapphire substrates, followed by a range of rapid thermal processing. The photoluminescence spectra of the Si-NC emission revealed an increase in luminescence intensity and a red-shift of the peak wavelength as a function of annealing conditions. We attribute the former effect to the reduction of implantation induced defects with increasing annealing temperature/duration. Measurements of the rate of decay of photoluminescence intensity at room temperature show a corresponding increase in the carrier lifetimes which is also an indication of a reduced contribution from non-radiative centers. The red-shift of the peak Si-NC intensity is ascribed to an increasing mean Si-NC size as a function of the annealing conditions. Also presented is an estimation of the relative Er sensitization which reveals that the smallest Si-NC size distribution leads to the greatest sensitization ratio. Further investigation in the form of excitation spectroscopy was used to show that Er ions are sensitized not only by energy transfer from the Si-NCs, but also, crucially, from defect states in the SiO2.
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.urihttp://hdl.handle.net/1885/218763
dc.language.isoen_AUen_AU
dc.publisherSociety of Photo-Optical Instrumentation Engineers
dc.relation.ispartofseriesSPIE Photonics West
dc.sourceSilicon Photonics V: Proceedings of the Society of Photo-optical Instrumentation Engineers
dc.subjectAnnealing condition
dc.subjectEr sensitization
dc.subjectEr-doped
dc.subjectErbium ion
dc.subjectDefect state
dc.subjectExcitation spectroscopy
dc.subjectImplantation-induced defects
dc.subjectLuminescence intensity
dc.subjectNonradiative centers
dc.subjectOptical investigation
dc.subjectOptical spectroscopy
dc.subjectPeak wavelength
dc.subjectPhotoluminescence Erbium
dc.subjectIon implantation
dc.subjectPhotoluminescence
dc.subjectRapid thermal annealing
dc.subjectSilicon nanocrystals
dc.titleOptical spectroscopy of Er doped Si-nanocrystals on sapphire substrates fabricated by ion-implantation into SiO2
dc.typeConference paper
local.contributor.affiliationHylton, N. P., University of Manchester
local.contributor.affiliationCrowe, I. F., University of Manchester
local.contributor.affiliationKnights, Andrew P, McMaster University
local.contributor.affiliationHalsall, M. P., University of Manchester
local.contributor.affiliationRuffell, Simon, College of Science, ANU
local.contributor.affiliationGwilliam, R, University of Surrey
local.contributor.authoremailrepository.admin@anu.edu.au
local.contributor.authoruidRuffell, Simon, u4241699
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020404 - Electronic and Magnetic Properties of Condensed Matter; Superconductivity
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communications
local.identifier.ariespublicationu4241699xPUB2
local.identifier.doi10.1117/12.852922
local.identifier.scopusID2-s2.0-77951684641
local.identifier.thomsonID000285576100004
local.identifier.uidSubmittedByu4241699
local.type.statusMetadata only

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