Influence of reactive ion etching on the minority carrier lifetime in P-type Si
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Deenapanray, P. N. K
Athukorala, C. S
Macdonald, D
Everett, V
Weber, K. J
Blakers, Andrew
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Quasi-steady-state photoconductance (QSSPC) and deep level transient spectroscopy (DLTS) were used to characterize the recombination properties of reactive ion etched p-type Si. The effective lifetime of the plasma-processed samples degraded after etching, with the densities of recombination centers increasing linearly with etch time, before reaching a plateau. Evidence is provided for the long-range (> 2 µm) migration of defects in the samples plasma-etched at room temperature. The relationship between rf power and lifetime degradation is also discussed. A defect with energy position at (0.31 ± 0.02) eV was detected by DLTS in RIE p-Si, whereas no defect level was measured in n-type Si. We demonstrate that this energy level could be used to adequately model the injection-dependence of the measured carrier lifetimes using the Shockley-Read-Hall model.
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Lifetime DLTS, Reactive ion etching, Shockley-Read-Hall model
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