SiOx Nanowires Grown via the Active Oxidation of Silicon

Date

2011

Authors

Shalav, Avi
Kim, Tae-Hyun
Elliman, Robert

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Amorphous, substoichiometric silica nanowires (NWs) can be grown on gold-coated silicon wafers by high-temperature annealing in an inert ambient with a low residual O2 partial pressure, consistent with conditions required for the active oxidation of the underlying Si substrate. The vapor precursor required for NW growth is volatile SiO obtained directly from the reaction between the substrate and the residual O2. This review summarizes the important elements of SiO}x NW growth under active oxidation conditions and includes some examples of more-complex multistructured SiO}x NW morphologies that utilize the active oxidation process.

Description

Keywords

Keywords: Active oxidation; Gold-coated silicon wafers; High-temperature annealing; Oxidation conditions; Oxidation process; Secondary growth; Si substrates; Silica nano wires; Gold coatings; Nanowires; Oxidation; Semiconducting silicon compounds; Silica; Silicon w Active oxidation; coatings; nanowires (NWs); secondary growth; silica; silicon

Citation

Source

IEEE Journal on Selected Topics in Quantum Electronics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/JSTQE.2010.2064288

Restricted until

2037-12-31