Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon

Kinomura, Atsushi; Horino, Y.; Nakano, Yukihiro; Williams, James

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Gettering of Copper to Hydrogen-induced Cavities in Multicrystalline Silicon

Date

2005

Authors

Kinomura, Atsushi

Horino, Y.

Nakano, Yukihiro

Williams, James

Publisher

American Institute of Physics (AIP)

Abstract

The gettering properties of hydrogen-induced cavities have been examined for Cu impurity atoms inherent in multicrystalline Si. Initial areal densities of Cu atoms in the multicrystalline samples were in the range of (3-5) × 1013 cm-2, below the level th