Some Aspects of the Design of Power Transistors
| dc.contributor.author | Fletcher, Neville H. | |
| dc.date.accessioned | 2020-10-15T02:39:39Z | |
| dc.date.issued | 1955 | |
| dc.description.abstract | This paper discusses some factors which have to be taken into account in the design of high power transistors. An effect of great importance is the reduction of emitter bias caused by transverse current flow in the base region. This effect is examined in some detail and the results of the discussion are applied to the design of improved transistor types. Finally, a short discussion of thermal stability and mechanical design is given. | en_AU |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.issn | 0096-8390 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/212512 | |
| dc.language.iso | en_AU | en_AU |
| dc.publisher | IEEE | en_AU |
| dc.rights | © 1955 IEEE | en_AU |
| dc.source | Proceedings of the IRE | en_AU |
| dc.title | Some Aspects of the Design of Power Transistors | en_AU |
| dc.type | Journal article | en_AU |
| local.bibliographicCitation.issue | 5 | en_AU |
| local.bibliographicCitation.lastpage | 559 | en_AU |
| local.bibliographicCitation.startpage | 551 | en_AU |
| local.contributor.affiliation | Fletcher, N. H., Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u1849746 | en_AU |
| local.description.embargo | 2037-12-31 | |
| local.description.notes | The author was affiliated with University of New England when the paper was published | en_AU |
| local.identifier.citationvolume | 43 | en_AU |
| local.identifier.doi | 10.1109/JRPROC.1955.278099 | en_AU |
| local.publisher.url | https://ieeexplore.ieee.org/ | en_AU |
| local.type.status | Published Version | en_AU |