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Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN

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Date

2000

Authors

Kucheyev, Sergei
Williams, James
Jagadish, Chennupati
Li, Gang
Pearton, S J

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

The damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the

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Citation

URI

http://hdl.handle.net/1885/89277

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

Book Title

Entity type

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License Rights

DOI

Restricted until

2037-12-31

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