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Field emission from randomly oriented ZnO nanowires

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dc.contributor.authorChang, Yong-Qin
dc.contributor.authorChen, Xi-Hong
dc.contributor.authorZhang, Hong-Zhou
dc.contributor.authorQiang, Wen-Jiang
dc.contributor.authorLong, Yi
dc.date.accessioned2015-11-19T05:25:07Z
dc.date.available2015-11-19T05:25:07Z
dc.date.issued2007-06-29
dc.date.updated2015-12-09T11:21:13Z
dc.description.abstractRandomly oriented zinc oxide (ZnO)nanowires with different diameters were synthesized on a large scale on silicon substrates through a simple physical evaporation method. The nanowires exhibit stable and uniform electron field emission, and the turn-on field reduces with the diameter decreasing. The perfect field emission ability of the ZnOnanowires may be related to their rough surface and sharp curvature. Considering the efficient synthesis method and their excellent field emission characteristics, the authors expect that the randomly oriented ZnOnanowire films could have a promising industrial prospect as economic emitters for flat panel displays.
dc.description.sponsorshipThis project is financially supported by the National Natural Science Foundation of China No. 50502005 and Beijing Natural Science Foundation No. 1062008. One of the authors Y.Q.C. is supported by the Beijing Novel Program.en_AU
dc.identifier.issn1071-1023en_AU
dc.identifier.urihttp://hdl.handle.net/1885/16532
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/1071-1023..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 19/11/15). Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Vacuum Science & Technology B and may be found at https://doi.org/10.1116/1.2752517
dc.sourceJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
dc.subjectKeywords: Field emission; Flat panel displays; Nanowires; Random processes; Economic emitters; Electron field emission; Silicon substrates; Zinc oxide
dc.titleField emission from randomly oriented ZnO nanowires
dc.typeJournal article
local.bibliographicCitation.issue4en_AU
local.bibliographicCitation.lastpage1252
local.bibliographicCitation.startpage1249en_AU
local.contributor.affiliationChang, Yongqin , University of Science and Technology Beijing, Chinaen_AU
local.contributor.affiliationChen, Xi-Hong, Peking University, Chinaen_AU
local.contributor.affiliationZhang, Hong-Zhou, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationQiang, Wen-Jiang , University of Science and Technology Beijing, Chinaen_AU
local.contributor.affiliationLong, Yi, University of Science and Technology Beijing, Chinaen_AU
local.contributor.authoruidu4191589en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020406en_AU
local.identifier.ariespublicationu4167262xPUB447en_AU
local.identifier.citationvolume25en_AU
local.identifier.doi10.1116/1.2752517en_AU
local.identifier.scopusID2-s2.0-34547559905
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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