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Limitations of a simplified dangling bond recombination model for a-Si:H

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dc.contributor.authorLi, Tsu-Tsung Andrew
dc.contributor.authorMcIntosh, Keith R.
dc.contributor.authorCuevas, Andres
dc.date.accessioned2015-12-18T00:01:54Z
dc.date.available2015-12-18T00:01:54Z
dc.date.issued2008-12-10
dc.date.updated2016-02-24T12:10:55Z
dc.description.abstractThe validity of a widely used simple closed-form expression for the recombination associated with dangling bonds in hydrogenated amorphous silicon (a-Si:H) is linked to the relative position of the distribution of the dangling bond states with respect to the quasi-Fermi levels for trapped electrons and holes. However, these quasi-Fermi levels for traps have not been derived before. In this work, we derive the four relevant quasi-Fermi levels for traps associated with dangling bonds in a-Si:H and clarify the limitations of the simple model.
dc.identifier.issn0021-8979en_AU
dc.identifier.urihttp://hdl.handle.net/1885/95090
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 18/12/15). Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.3037235
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Amorphous silicon; Fermi level; Fermions; Semiconducting silicon compounds; Silicon; Closed forms; Hydrogenated amorphous silicons; Recombination models; Relative positions; SIMPLE models; Trapped electrons; Dangling bonds
dc.titleLimitations of a simplified dangling bond recombination model for a-Si:H
dc.typeJournal article
local.bibliographicCitation.issue11en_AU
local.bibliographicCitation.startpage113718en_AU
local.contributor.affiliationLi, Tsu-Tsung (Andrew), College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationMcIntosh, Keith, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationCuevas, Andres, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.authoruidu4436010en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.ariespublicationu9606031xPUB4en_AU
local.identifier.citationvolume104en_AU
local.identifier.doi10.1063/1.3037235en_AU
local.identifier.scopusID2-s2.0-58149268941
local.identifier.thomsonID000262364000083
local.type.statusPublished Versionen_AU

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