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The critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals

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dc.contributor.authorYang, Xinbo
dc.contributor.authorFujiwara, K.
dc.contributor.authorAbrosimov, N. V.
dc.contributor.authorGotoh, R.
dc.contributor.authorNozawa, J.
dc.contributor.authorKoizumi, H.
dc.contributor.authorKwasniewski, A.
dc.contributor.authorUda, S.
dc.date.accessioned2015-09-20T23:59:34Z
dc.date.available2015-09-20T23:59:34Z
dc.date.issued2012
dc.date.updated2016-02-24T08:47:47Z
dc.description.abstractCrystal-melt interfacemorphological transformation of differently oriented SiGe crystals with different Ge concentrations was observed, and the effect of Ge concentration on critical growth velocity (V c) for the interfacemorphological transformation was investigated. A planar-to-faceted morphological transformation for the 〈110〉, 〈112〉, and 〈100〉 interfaces was observed. V c for planar-to-faceted transformation of the 〈110〉, 〈112〉, and 〈100〉 interfaces decreases nonlinearly with increasing Ge concentration. SiGe faceted interfaces can be attributed to the fact that the perturbation induced in a planar interface was amplified when the constitutional undercooled zone was formed at high growth velocities.
dc.description.sponsorshipXinbo Yang gratefully acknowledges the Japan Society for the Promotion of Science (JSPS) Postdoctoral Fellowship for financial support. This work was partially funded by the Cabinet Office, Government of Japan through its “Funding Program for Next Generation World-Leading Researchers.”en_AU
dc.format5 pages
dc.identifier.issn0003-6951en_AU
dc.identifier.urihttp://hdl.handle.net/1885/15584
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 21/09/15). Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://dx.doi.org/10.1063/1.3698336
dc.sourceApplied Physics Letters
dc.subjectKeywords: Critical growth; Crystal-melt interface; Ge concentrations; High growth velocities; Morphological transformations; Planar interface; Physical properties; Physics; Silicon alloys
dc.titleThe critical growth velocity for planar-to-faceted interfaces transformation in SiGe crystals
dc.typeJournal article
local.bibliographicCitation.issue14en_AU
local.bibliographicCitation.startpage141601en_AU
local.contributor.affiliationYang, Xinbo, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National Universityen_AU
local.contributor.affiliationFujiwara, K., Tohoku University, Japanen_AU
local.contributor.affiliationAbrosimov, N. V., Leibniz Institute for Crystal Growth, Germanyen_AU
local.contributor.affiliationGotoh, R, Tohoku University, Japanen_AU
local.contributor.affiliationNozawa, J, Tohoku University, Japanen_AU
local.contributor.affiliationKoizumi, H, Tohoku University, Japanen_AU
local.contributor.affiliationKwasniewski, A, Leibniz Institute for Crystal Growth, Germanyen_AU
local.contributor.affiliationUda, S, Tohoku University, Japanen_AU
local.contributor.authoruidu5096110en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor090605en_AU
local.identifier.absseo850504en_AU
local.identifier.ariespublicationf5625xPUB1525en_AU
local.identifier.citationvolume100en_AU
local.identifier.doi10.1063/1.3698336en_AU
local.identifier.scopusID2-s2.0-84859804953
local.identifier.thomsonID000302567800010
local.publisher.urlhttps://www.aip.org/en_AU
local.type.statusPublished Versionen_AU

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