Stable Dopant-Free Asymmetric Heterocontact Silicon Solar Cells with Efficiencies above 20%
Date
Authors
Bullock, James
Wan, Yimao
Xu, Zhaoran
Essig, Stephanie
Hettick, Mark
Wang, Hanchen
Ji, Wenbo
Boccard, Mathieu
Cuevas, Andres
Ballif, Christophe
Journal Title
Journal ISSN
Volume Title
Publisher
American Chemical Society
Abstract
Development of new device architectures and process technologies is of tremendous interest in crystalline silicon (c-Si) photovoltaics to drive enhanced performance and/or reduced processing cost. In this regard, an emerging concept with a high-efficiency potential is to employ low/high work function metal compounds or organic materials to form asymmetric electron and hole heterocontacts. This Letter demonstrates two important milestones in advancing this burgeoning concept. First, a high-performance, low-temperature, electron-selective heterocontact is developed, comprised of a surface passivating a-Si:H layer, a protective TiOx interlayer, and a low work function LiFx/Al outer electrode. This is combined with a MoOx hole-selective heterocontact to demonstrate a cell efficiency of 20.7%, the highest value for this cell class to date. Second, we show that this cell passes a standard stability test by maintaining >95% of its original performance after 1000 h of unencapsulated damp heat exposure, indicating its potential for longevity.
Description
Keywords
Citation
Collections
Source
ACS Energy Letters
Type
Book Title
Entity type
Access Statement
License Rights
Restricted until
2099-12-31
Downloads
File
Description