Ti/Ni/Au contacts to n-SiC after low energy implantation

Abstract

The effect of lowenergy implantation of Por Cionsin 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two- ontact circularte ststructure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was1.29 x 10 x 6 Ω cm2. The value of ρc increased significantly at an implant dose of1 x 1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species. Show more