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Ti/Ni/Au contacts to n-SiC after low energy implantation

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Date

2016

Authors

Leech, Patrick W
Holland, A S
Reeves, G K
Pan, Yue
Ridgway, Mark C
Tanner, Phillip

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

The effect of lowenergy implantation of Por Cionsin 3C-SiC on the properties of Ti/Ni/Au contacts has been examined for doses in the range 1013–1015 ions/cm2. Measurements of specific contact resistance, ρc, were performed using the two- ontact circularte ststructure. The magnitude of ρc for the Ti/Ni/Au contacts on unimplanted SiC was1.29 x 10 x 6 Ω cm2. The value of ρc increased significantly at an implant dose of1 x 1015 ions/cm2. The dependence of Rsh and ρc on ion dose has been measured using both C and P implant species.

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Citation

URI

http://hdl.handle.net/1885/103502

Collections

ANU Research Publications

Source

Materials Letters

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.matlet.2015.12.036

Restricted until

2037-12-31

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