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Heavy Ion Induced Intermixing at Ta/Si and Ta/SiO 2 Interfaces

Date

Authors

Berky, W

Balogh, A G

Elliman, Robert

Publisher

Elsevier

Abstract

Systematic ion beam mixing experiments have been performed on Ta/SiO 2 and Ta/Si interfaces. Tantalum was evaporated on silicon and SiO2/silicon substrates by means of molecular beam epithaxy. Samples were subsequently irradiated with 500 keV Si, 100 keV

Keywords

Keywords: Atomic force microscopy; Ballistics; Diffusion; Interfaces (materials); Ion beams; Molecular dynamics; Radiation; Rutherford backscattering spectroscopy; Silicon compounds; Tantalum; Thermoanalysis; Binary collision (BC); Ion beam mixing; Radiation enhanc Ion beam mixing; Radiation enhanced diffusion; Tantalum; Thermal spike

URI

http://hdl.handle.net/1885/77550

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/j.nimb.2004.06.026