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Transfer printing of semiconductor nanowire lasers

dc.contributor.authorHurtado, Antonio
dc.contributor.authorJevtics, Dimitars
dc.contributor.authorGuilhabert, Benoit
dc.contributor.authorGao, Qiang
dc.contributor.authorTan, Hark Hoe
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorDawson, Martin D.
dc.date.accessioned2021-12-17T02:55:56Z
dc.date.issued2018
dc.date.updated2020-11-23T12:00:06Z
dc.description.abstractThe authors review their work on the accurate positioning of semiconductor nanowire (NW) lasers by means of nanoscale Transfer Printing (nano-TP). Using this hybrid nanofabrication technique, indium phosphide NWs are successfully integrated at selected locations onto heterogeneous surfaces with high positioning accuracy. Moreover, they show that NW lasers can also be organised to form bespoke spatial patterns, including (one-dimensional) 1D or 2D arrays, or complex configurations with a defined number of NWs and controlled separation between them. Besides, their nano-TP technique also permits the integration of NWs with different dimensions in a single system. Notably, the nano-TP fabrication protocols do not affect the optical or structural properties of the NWs and they retain their room-temperature lasing emission after their positioning onto all investigated receiving surfaces. This developed nano-TP technique offers therefore new exciting prospects for the fabrication of hybrid bespoke nanophotonic systems using NW lasers as building blocks.en_AU
dc.description.sponsorshipFinancial support for this work was provided by the University of Strathclyde (through the Strathclyde's Chancellor Fellowship Program), the Australian Research Council, and the UK's Engineering and Physical Sciences Research Council (grant EP/ I029141/1). The authors thank the Australian National Fabrication Facility, ACT Node, for access to the growth facilities used in this work.en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn1751-8768en_AU
dc.identifier.urihttp://hdl.handle.net/1885/256648
dc.language.isoen_AUen_AU
dc.publisherInstitute of Engineering and Technologyen_AU
dc.rights© The Institution of Engineering and Technology 2017en_AU
dc.sourceIET Optoelectronicsen_AU
dc.titleTransfer printing of semiconductor nanowire lasersen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsFree Access via publisher websiteen_AU
local.bibliographicCitation.issue1en_AU
local.bibliographicCitation.lastpage35en_AU
local.bibliographicCitation.startpage30en_AU
local.contributor.affiliationHurtado, Antonio, University of Strathclydeen_AU
local.contributor.affiliationJevtics, Dimitars, University of Strathclydeen_AU
local.contributor.affiliationGuilhabert, Benoit, University of Strathclydeen_AU
local.contributor.affiliationGao, Qiang, College of Science, ANUen_AU
local.contributor.affiliationTan, Hoe, College of Science, ANUen_AU
local.contributor.affiliationJagadish, Chennupati, College of Science, ANUen_AU
local.contributor.affiliationDawson, Martin D., University of Strathclydeen_AU
local.contributor.authoruidGao, Qiang, u4006742en_AU
local.contributor.authoruidTan, Hoe, u9302338en_AU
local.contributor.authoruidJagadish, Chennupati, u9212349en_AU
local.description.embargo2099-12-31
local.description.notesImported from ARIESen_AU
local.identifier.absfor100706 - Nanofabrication, Growth and Self Assemblyen_AU
local.identifier.absfor020504 - Photonics, Optoelectronics and Optical Communicationsen_AU
local.identifier.absseo970110 - Expanding Knowledge in Technologyen_AU
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciencesen_AU
local.identifier.ariespublicationa383154xPUB9273en_AU
local.identifier.citationvolume12en_AU
local.identifier.doi10.1049/iet-opt.2017.0105en_AU
local.identifier.essn1751-8776en_AU
local.identifier.scopusID2-s2.0-85040593916
local.publisher.urlhttp://digital-library.theiet.org/content/journals/iet-opten_AU
local.type.statusPublished Versionen_AU

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