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Resistive Switching on High-K dielectircs for Non-volatile Memory Applications

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Date

2012

Authors

Elliman, Robert
Nawaz (Saleh), Muhammad
Venkatachalam, Dinesh
Kim, Tae-Hyun
Belay, Kidane
Karouta, Fouad

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.

Description

Keywords

Keywords: Film microstructures; High-k dielectric; Non-volatile memory application; Recent researches; Resistive Random Access Memory (ReRAM); Resistive switching; Switching characteristics; Transition-metal oxides; Data storage equipment; Microelectronics; Switchi

Citation

URI

http://hdl.handle.net/1885/59902

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472390

Restricted until

2037-12-31

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Description
01_Elliman_Resistive_Switching_on_High-K_2012.pdf (392.29 KB)

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