Resistive Switching on High-K dielectircs for Non-volatile Memory Applications
Date
2012
Authors
Elliman, Robert
Nawaz (Saleh), Muhammad
Venkatachalam, Dinesh
Kim, Tae-Hyun
Belay, Kidane
Karouta, Fouad
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE Inc)
Abstract
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
Description
Keywords
Keywords: Film microstructures; High-k dielectric; Non-volatile memory application; Recent researches; Resistive Random Access Memory (ReRAM); Resistive switching; Switching characteristics; Transition-metal oxides; Data storage equipment; Microelectronics; Switchi
Citation
Collections
Source
COMMAD 2012 Proceedings
Type
Conference paper
Book Title
Entity type
Access Statement
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Restricted until
2037-12-31