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Self-Ion-induced Swelling of Germanium

Date

Authors

Stritzker, B

Elliman, Robert

Zou, Jin

Publisher

Elsevier

Abstract

Ge substrates of (100) orientation were irradiated with 1.0 MeV Ge ions at temperatures in the range from -180°C to 500°C. Pronounced swelling of the irradiated material up to 4000 Å, associated with the formation of a porous surface layer, was evident

Keywords

Keywords: Annealing; Density (specific gravity); Ion bombardment; Ion implantation; Porous materials; Sputtering; Surface structure; Swelling; Thermodynamic stability; Transmission electron microscopy; Self ion induced swelling; Semiconducting germanium Ge self-ion irradiation; Porous germanium; Swelling

URI

http://hdl.handle.net/1885/68477

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(00)00597-8

Restricted until

2037-12-31

Downloads

File

Description

01_Stritzker_Self-Ion-induced_Swelling_of_2001.pdf (175.29 KB)