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Lifetime spectroscopy of FeB pairs in silicon

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dc.contributor.authorMacdonald, Den_US
dc.contributor.authorCuevas, Andresen_US
dc.coverage.spatialEstes Park, Coloradoen_US
dc.coverage.temporalAugust 19-22en_US
dc.date.accessioned2003-07-30en_US
dc.date.accessioned2004-05-19T13:01:16Zen_US
dc.date.accessioned2011-01-05T08:29:06Z
dc.date.available2004-05-19T13:01:16Zen_US
dc.date.available2011-01-05T08:29:06Z
dc.date.created2001en_US
dc.date.issued2001en_US
dc.description.abstractInjection-level dependent lifetime curves of iron-contaminated silicon wafers of various resistivities have been modeled using Shockley-Read- Hall theory. The modeling allows accurate determination of the capture cross-sections of FeB pairs. These cross-sections are then used to extend the validity of a commonly used method for determining iron concentrations to all resistivities. The impact of interstitial iron on solar cell parameters is also modeled and discussed.en_US
dc.format.extent225807 bytesen_US
dc.format.extent352 bytesen_US
dc.format.extent352 bytesen_US
dc.format.mimetypeapplication/pdfen_US
dc.format.mimetypeapplication/octet-streamen_US
dc.format.mimetypeapplication/octet-streamen_US
dc.identifier.urihttp://hdl.handle.net/1885/40841en_US
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/1885/40841
dc.language.isoen_AUen_US
dc.relation.ispartofseries11th Workshop of Crystalline Silicon Solar Cell Materials and Processesen_US
dc.subjectiron-contaminated silicon wafersen_US
dc.subjectShockley-Read-Hall theoryen_US
dc.subjectFeB pairsen_US
dc.subjectlifetime spectroscopyen_US
dc.subjectdiffusion lengthsen_US
dc.subjectsilicon solar cellsen_US
dc.titleLifetime spectroscopy of FeB pairs in siliconen_US
dc.typeConference paperen_US
local.description.refereednoen_US
local.identifier.citationpages24-31en_US
local.identifier.citationyear2001en_US
local.identifier.eprintid1790en_US
local.rights.ispublishedyesen_US

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