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Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition

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Date

2005

Authors

Gao, Q
Buda, Manuela
Jagadish, Chennupati
Tan, Hark Hoe

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Abstract

An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.

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Keywords

quantum dots, MOCVD, semiconductor lasers

Citation

URI

http://hdl.handle.net/1885/43095

Collections

ANU Research Publications

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Journal article

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ESL-QD_laser-Gao-000G57[1].pdf (358.36 KB)

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