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Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens

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dc.contributor.authorPan, Si
dc.contributor.authorRecht, Daniel
dc.contributor.authorCharnvanichborikarn, Supakit
dc.contributor.authorWilliams, James
dc.contributor.authorAziz, Michael
dc.date.accessioned2015-12-07T22:19:30Z
dc.date.issued2011
dc.date.updated2016-02-24T09:52:56Z
dc.description.abstractWe show that single-crystal silicon supersaturated with sulfur (S), selenium (Se), or tellurium (Te) displays a substantially enhanced absorption coefficient for light with wavelengths of 400 to 1600 nm. Alloys were prepared in silicon on insulator wafers by ion implantation followed by nanosecond pulsed laser melting. Measurements of the absorption coefficient were made by direct transmission through freestanding thin films and by spectroscopic ellipsometry.
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/19377
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.subjectKeywords: Absorption coefficients; Chalcogens; Enhanced absorption; Free-standing thin films; Nanosecond pulsed laser; Silicon on insulator wafers; Single crystal silicon; Visible and near infrared; Absorption; Absorption spectroscopy; Ion implantation; Light absor
dc.titleEnhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
dc.typeJournal article
local.bibliographicCitation.issue12
local.bibliographicCitation.startpage121913
local.contributor.affiliationPan, Si, Brandeis University
local.contributor.affiliationRecht, Daniel, Harvard University
local.contributor.affiliationCharnvanichborikarn, Supakit, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationAziz, Michael, Harvard University
local.contributor.authoruidCharnvanichborikarn, Supakit, u3251081
local.contributor.authoruidWilliams, James, u8809701
local.description.notesImported from ARIES
local.identifier.absfor091204 - Elemental Semiconductors
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu3251081xPUB8
local.identifier.citationvolume98
local.identifier.doi10.1063/1.3567759
local.identifier.scopusID2-s2.0-79953846062
local.identifier.thomsonID000288808200033
local.type.statusPublished Version

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