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Efficiency of dislocations and cavities for gettering of Cu and Fe in silico

Date

Authors

Stritzker, B

Petravic, Mladen

Wong-Leung, Jennifer

Williams, James

Publisher

Elsevier

Abstract

Dislocations (of interstitial character) as well as cavities are known for their ability to getter impurities within Si. In order to determine the relative gettering strength we produced both dislocations and cavities at different depths within (100) Si.

Keywords

Keywords: Annealing; Copper; Crystal impurities; Dislocations (crystals); Ion implantation; Iron; Point defects; Secondary ion mass spectrometry; Transmission electron microscopy; Gettering; Interstitials; Open volume defects; Silicon wafers Cavities; Cu-gettering; Dislocations; Fe-gettering; Open-volume defects

URI

http://hdl.handle.net/1885/68170

Collections

ANU Research Publications

Source

Nuclear Instruments and Methods in Physics Research: Section B

Type

Journal article

DOI

10.1016/S0168-583X(00)00610-8

Restricted until

2037-12-31

Downloads

File

Description

01_Stritzker_Efficiency_of_dislocations_and_2001.pdf (123.39 KB)