Interlayer bound wannier excitons in germanium sulfide
| dc.contributor.author | Postorino, Sara | |
| dc.contributor.author | Sun, Jianbo | |
| dc.contributor.author | Fiedler, Saskia | |
| dc.contributor.author | Lee Cheong Lem, Olivier | |
| dc.contributor.author | Palummo, Maurizia | |
| dc.contributor.author | Camilli, Luca | |
| dc.date.accessioned | 2022-10-07T03:10:19Z | |
| dc.date.available | 2022-10-07T03:10:19Z | |
| dc.date.issued | 2020 | |
| dc.date.updated | 2021-11-28T07:21:51Z | |
| dc.description.abstract | We report a cathodoluminescence (CL) study of layered germanium sulfide (GeS) where we observe a sharp emission peak from flakes covered with a thin hexagonal boron nitride film. GeS is a material that has recently attracted considerable interest due to its emission in the visible region and its strong anisotropy. The measured CL peak is at ~1.69 eV for samples ranging in thickness from 97 nm to 45 nm, where quantum-confinement effects can be excluded. By performing ab initio ground- and excited-state simulations for the bulk compound, we show that the measured optical peak can be unambiguously explained by radiative recombination of the first free bright bound exciton, which is due to a mixing of direct transitions near the Γ-point of the Brillouin Zone and it is associated to a very large optical anisotropy. The analysis of the corresponding excitonic wave function shows a Wannier-Mott interlayer character, being spread not only in-plane but also out-of-plane. | en_AU |
| dc.description.sponsorship | This research is supported by the Villum Fonden through the Young Investigator Program (Project No. 19130). S.F. acknowledges support from the Villum Fonden via VILLUM Investigator grant No. 16498. L.C. acknowledges support from the Italian Ministry of Education, University and Research (MIUR) via “Programma per Giovani Ricercatori—Rita Levi Montalcini 2017”. M.P. and S.P. acknowledge ISCRA-B and -C initiatives for awarding access to computing resources on Marconi (knl and 100) at CINECA, Italy. MP acknowledge financial support from the EU MSCA HORIZON2020 project DiSeTCom (GA 823728) | en_AU |
| dc.format.mimetype | application/pdf | en_AU |
| dc.identifier.issn | 1996-1944 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/274366 | |
| dc.language.iso | en_AU | en_AU |
| dc.provenance | This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). | en_AU |
| dc.publisher | MDPI Publishing | en_AU |
| dc.rights | © 2020 by the authors. Licensee MDPI, Basel, Switzerland. | en_AU |
| dc.rights.license | Creative Commons Attribution License | en_AU |
| dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_AU |
| dc.source | Materials | en_AU |
| dc.title | Interlayer bound wannier excitons in germanium sulfide | en_AU |
| dc.type | Journal article | en_AU |
| dcterms.accessRights | Open Access | en_AU |
| local.bibliographicCitation.issue | 16 | en_AU |
| local.bibliographicCitation.lastpage | 11 | en_AU |
| local.bibliographicCitation.startpage | 1 | en_AU |
| local.contributor.affiliation | Postorino, Sara, Tor Vergata University of Rome | en_AU |
| local.contributor.affiliation | Sun, Jianbo, Technical University of Denmark | en_AU |
| local.contributor.affiliation | Fiedler, Saskia, University of Southern Denmark | en_AU |
| local.contributor.affiliation | Lee Cheong Lem, Olivier, College of Science, ANU | en_AU |
| local.contributor.affiliation | Palummo, Maurizia, Tor Vergata University of Rome | en_AU |
| local.contributor.affiliation | Camilli, Luca, Tor Vergata University of Rome | en_AU |
| local.contributor.authoruid | Lee Cheong Lem, Olivier, u1077231 | en_AU |
| local.description.notes | Imported from ARIES | en_AU |
| local.identifier.absfor | 510403 - Condensed matter modelling and density functional theory | en_AU |
| local.identifier.absfor | 510204 - Photonics, optoelectronics and optical communications | en_AU |
| local.identifier.absfor | 401603 - Compound semiconductors | en_AU |
| local.identifier.ariespublication | a383154xPUB15673 | en_AU |
| local.identifier.citationvolume | 13 | en_AU |
| local.identifier.doi | 10.3390/MA13163568 | en_AU |
| local.identifier.scopusID | 2-s2.0-85090038987 | |
| local.publisher.url | https://www.mdpi.com/ | en_AU |
| local.type.status | Published Version | en_AU |
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