Interlayer bound wannier excitons in germanium sulfide

dc.contributor.authorPostorino, Sara
dc.contributor.authorSun, Jianbo
dc.contributor.authorFiedler, Saskia
dc.contributor.authorLee Cheong Lem, Olivier
dc.contributor.authorPalummo, Maurizia
dc.contributor.authorCamilli, Luca
dc.date.accessioned2022-10-07T03:10:19Z
dc.date.available2022-10-07T03:10:19Z
dc.date.issued2020
dc.date.updated2021-11-28T07:21:51Z
dc.description.abstractWe report a cathodoluminescence (CL) study of layered germanium sulfide (GeS) where we observe a sharp emission peak from flakes covered with a thin hexagonal boron nitride film. GeS is a material that has recently attracted considerable interest due to its emission in the visible region and its strong anisotropy. The measured CL peak is at ~1.69 eV for samples ranging in thickness from 97 nm to 45 nm, where quantum-confinement effects can be excluded. By performing ab initio ground- and excited-state simulations for the bulk compound, we show that the measured optical peak can be unambiguously explained by radiative recombination of the first free bright bound exciton, which is due to a mixing of direct transitions near the Γ-point of the Brillouin Zone and it is associated to a very large optical anisotropy. The analysis of the corresponding excitonic wave function shows a Wannier-Mott interlayer character, being spread not only in-plane but also out-of-plane.en_AU
dc.description.sponsorshipThis research is supported by the Villum Fonden through the Young Investigator Program (Project No. 19130). S.F. acknowledges support from the Villum Fonden via VILLUM Investigator grant No. 16498. L.C. acknowledges support from the Italian Ministry of Education, University and Research (MIUR) via “Programma per Giovani Ricercatori—Rita Levi Montalcini 2017”. M.P. and S.P. acknowledge ISCRA-B and -C initiatives for awarding access to computing resources on Marconi (knl and 100) at CINECA, Italy. MP acknowledge financial support from the EU MSCA HORIZON2020 project DiSeTCom (GA 823728)en_AU
dc.format.mimetypeapplication/pdfen_AU
dc.identifier.issn1996-1944en_AU
dc.identifier.urihttp://hdl.handle.net/1885/274366
dc.language.isoen_AUen_AU
dc.provenanceThis article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).en_AU
dc.publisherMDPI Publishingen_AU
dc.rights© 2020 by the authors. Licensee MDPI, Basel, Switzerland.en_AU
dc.rights.licenseCreative Commons Attribution Licenseen_AU
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_AU
dc.sourceMaterialsen_AU
dc.titleInterlayer bound wannier excitons in germanium sulfideen_AU
dc.typeJournal articleen_AU
dcterms.accessRightsOpen Accessen_AU
local.bibliographicCitation.issue16en_AU
local.bibliographicCitation.lastpage11en_AU
local.bibliographicCitation.startpage1en_AU
local.contributor.affiliationPostorino, Sara, Tor Vergata University of Romeen_AU
local.contributor.affiliationSun, Jianbo, Technical University of Denmarken_AU
local.contributor.affiliationFiedler, Saskia, University of Southern Denmarken_AU
local.contributor.affiliationLee Cheong Lem, Olivier, College of Science, ANUen_AU
local.contributor.affiliationPalummo, Maurizia, Tor Vergata University of Romeen_AU
local.contributor.affiliationCamilli, Luca, Tor Vergata University of Romeen_AU
local.contributor.authoruidLee Cheong Lem, Olivier, u1077231en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor510403 - Condensed matter modelling and density functional theoryen_AU
local.identifier.absfor510204 - Photonics, optoelectronics and optical communicationsen_AU
local.identifier.absfor401603 - Compound semiconductorsen_AU
local.identifier.ariespublicationa383154xPUB15673en_AU
local.identifier.citationvolume13en_AU
local.identifier.doi10.3390/MA13163568en_AU
local.identifier.scopusID2-s2.0-85090038987
local.publisher.urlhttps://www.mdpi.com/en_AU
local.type.statusPublished Versionen_AU

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