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Ion-Dose-Dependent Microstructure in Amorphous Ge

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dc.contributor.authorRidgway, Mark C
dc.contributor.authorGlover, Christopher
dc.contributor.authorForan, Garry J
dc.contributor.authorClerc, C
dc.contributor.authorHansen, Jeffrey
dc.contributor.authorNylandsted-Larsen, A
dc.date.accessioned2015-12-08T22:25:35Z
dc.date.available2015-12-08T22:25:35Z
dc.date.issued2000
dc.date.updated2015-12-08T09:07:12Z
dc.description.abstractImplantation-induced, microstructural modifications including increased bond length and non-Gaussian static disorder have been measured in amorphous Ge using extended x-ray absorption fine-structure spectroscopy. The evolution of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects.
dc.identifier.issn1098-0121
dc.identifier.urihttp://hdl.handle.net/1885/33501
dc.publisherAmerican Physical Society
dc.sourcePhysical Review B: Condensed Matter and Materials
dc.titleIon-Dose-Dependent Microstructure in Amorphous Ge
dc.typeJournal article
local.bibliographicCitation.lastpage12 589
local.bibliographicCitation.startpage12 586
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationGlover, Christopher, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationForan, Garry J, Australian Nuclear Science and Technology Organisation
local.contributor.affiliationClerc, C, CNRS
local.contributor.affiliationHansen, Jeffrey, University of Aarhus
local.contributor.affiliationNylandsted-Larsen, A, University of Aarhus
local.contributor.authoruidRidgway, Mark C, u9001886
local.contributor.authoruidGlover, Christopher, u3915129
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub103
local.identifier.citationvolume61
local.identifier.scopusID2-s2.0-0001272479
local.type.statusPublished Version

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