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Influence of implantation damage on emitter recombination

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Date

2014

Authors

Ratcliff, Thomas
Shalav, Avi
Fong, Kean
Elliman, Robert
Blakers, Andrew

Journal Title

Journal ISSN

Volume Title

Publisher

Elsevier

Abstract

In this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation

Description

Keywords

Citation

URI

http://hdl.handle.net/1885/61711

Collections

ANU Research Publications

Source

Energy Procedia

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1016/j.egypro.2014.08.080

Restricted until

2037-12-31

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