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Low Loss, Thin p-clad 980-nm InGaAs Semiconductor Laser Diodes with an Asymmetric Structure Design

Date

Authors

Buda, Manuela

Hay, J

Wong-Leung, Jennifer

Jagadish, Chennupati

Tan, Hark Hoe

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Thin p-clad InGaAs ridge waveguide quantum-well lasers having an asymmetric structure design were fabricated. The internal absorption coefficient is as low as 2.5 cm-1, due to the restricted field extension in the 0.3-μm-thick p-type top AlGaAs cladding

Keywords

Keywords: Annealing; Gold; Heterojunctions; Interfaces (materials); Light scattering; Metallizing; Ohmic contacts; Semiconducting indium gallium arsenide; Semiconductor device structures; Titanium compounds; Asymmetric structure design; Indium gallium arsenide semi Asymmetric structure; Quantum-well lasers; Semiconductor lasers; Thin p-clad

URI

http://hdl.handle.net/1885/86859

Collections

ANU Research Publications

Source

IEEE Journal of Quantum Electronics

Type

Journal article

DOI

10.1109/JQE.2003.810270

Restricted until

2037-12-31

Downloads

File

Description

01_Buda_Low_Loss,_Thin_p-clad_980-nm_2003.pdf (711.62 KB)

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