Ion-beam-produced Damage and its Stability in AIN Films

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dc.contributor.authorKucheyev, Sergei
dc.contributor.authorWilliams, James
dc.contributor.authorZou, Jin
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorPophristic, M
dc.contributor.authorGuo, S
dc.contributor.authorFerguson, I T
dc.contributor.authorManasreh, M O
dc.date.accessioned2015-12-13T22:19:40Z
dc.date.issued2002
dc.date.updated2015-12-11T07:49:18Z
dc.description.abstractStructural characteristics of single-crystal wurtzite AlN epilayers (grown on sapphire substrates) bombarded with 300 keV197Au+ ions at room and liquid-nitrogen temperatures (RT and LN2) are studied by a combination of Rutherford backscattering/channeling spectrometry and cross-sectional transmission electron microscopy. Results reveal extremely strong dynamic annealing of ion-beam-generated defects in AlN. Lattice amorphization is not observed even for very large doses of keV heavy ions at LN2. An increase in irradiation temperature from LN2 to RT has a relatively small effect on the production of stable structural damage in AlN. In contrast to the case of AlxGa1-xN with x≤0.6, neither damage saturation in the crystal bulk (below the random level) nor preferential surface disordering is revealed for AlN. Results also show that structural lattice disorder produced in AlN by high-dose keV heavy-ion bombardment is stable to rapid thermal annealing at temperatures as high as 1000°C.
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/71928
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceJournal of Applied Physics
dc.subjectKeywords: AlN; AlN films; Cross sectional transmission electron microscopy; Dynamic annealing; High dose; Irradiation temperature; Lattice disorders; Liquid nitrogen temperature; Rutherford backscattering/channeling; Sapphire substrates; Single-crystal wurtzite; St
dc.titleIon-beam-produced Damage and its Stability in AIN Films
dc.typeJournal article
local.bibliographicCitation.issue7
local.bibliographicCitation.lastpage3558
local.bibliographicCitation.startpage3554
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationZou, Jin, University of Queensland
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPophristic, M, EMCORE Corporation
local.contributor.affiliationGuo, S, EMCORE Corporation
local.contributor.affiliationFerguson, I T, EMCORE Corporation
local.contributor.affiliationManasreh, M O, University of New Mexico
local.contributor.authoremailu8809701@anu.edu.au
local.contributor.authoruidKucheyev, Sergei, u9910365
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor020204 - Plasma Physics; Fusion Plasmas; Electrical Discharges
local.identifier.ariespublicationMigratedxPub2957
local.identifier.citationvolume92
local.identifier.doi10.1063/1.1501746
local.identifier.scopusID2-s2.0-18644386257
local.identifier.uidSubmittedByMigrated
local.type.statusPublished Version

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