Mechanisms of electrical isolation in O+-irradiated ZnO
Date
2008
Authors
Zubiaga, A
Tuomisto, F
Coleman, Victoria A
Jagadish, Chennupati
Koike, Kazuto
Sasa, Shigehiko
Inoue, Masataka
Yano, Mitsuaki
Tan, Hark Hoe
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Volume Title
Publisher
American Physical Society
Abstract
We have applied positron annihilation spectroscopy combined with sheet resistance measurements to study the electrical isolation of thin ZnO layers irradiated with 2 MeV O+ ions at various fluences. Our results indicate that Zn vacancies, the dominant defects detected by positrons, are produced in the irradiation at a relatively low rate of about 2000 cm-1 when the ion fluence is at most 1015 cm-2 and that vacancy clusters are created at higher fluences. The Zn vacancies introduced in the irradiation act as dominant compensating centers and cause the electrical isolation, while the results suggest that the vacancy clusters are electrically inactive.
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Source
Physical Review B: Condensed Matter and Materials
Type
Journal article