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Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers

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Date

2005

Authors

MacDonald, Daniel
Roth, Thomas
Geerligs, Lambert Johan
Cuevas, Andres

Journal Title

Journal ISSN

Volume Title

Publisher

Scientific.Net

Abstract

Changes in the concentration of interstitial iron in multicrystalline silicon wafers after high temperature annealing (900°C) have been monitored by carrier lifetime measurements. Two cooling rates were investigated. The first was considered 'fast', mean

Description

Keywords

Keywords: Crystalline silicon; Implanted iron; Lower temperatures; Recombination; Annealing; Crystalline materials; Diffusion; High temperature applications; Precipitates; Precipitation (chemical); Solubility; Supersaturation; Silicon wafers Crystalline silicon; Iron; Precipitates; Recombination

Citation

URI

http://hdl.handle.net/1885/82631

Collections

ANU Research Publications

Source

Solid State Phenomena

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

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