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MOCVD growth of GaAs nanowires using Ga droplets

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Date

2012

Authors

Breuer, Steffan
Karouta, Fouad
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.

Description

Keywords

Keywords: Comparative studies; Crystalline quality; Gaas nanowires; Growth conditions; Metal-organic chemical vapour depositions; MOCVD growth; Nanowire surface; Si(111) substrate; Drops; Gallium arsenide; Microelectronics; Nanowires; Organic chemicals; Semiconduct

Citation

URI

http://hdl.handle.net/1885/59760

Collections

ANU Research Publications

Source

COMMAD 2012 Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/COMMAD.2012.6472349

Restricted until

2037-12-31

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Description
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