Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Date

2011

Authors

Liu, Xinjun
Sadaf, Sharif Md.
Son, Myungwoo
Shin, Jungho
Park, Jubong
Lee, Joonmyoung
Park, Sangsu
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

The combination of a threshold switching device and a resistive switching (RS) device was proposed to suppress the undesired sneak current for the integration of bipolar RS cells in a cross-point array type memory. A simulation for this hybrid-type device shows that the matching of key parameters between switch element and memory element is an important issue. Based on the threshold switching oxides, a conceptual structure with a simple metal-oxide1-oxide2-metal stack was provided to accommodate the evolution trend. We show that electroformed W-NbOx-Pt devices can simultaneously exhibit both threshold switching and memory switching. A qualitative model was suggested to elucidate the unique properties in a W-NbOx-Pt stack, where threshold switching is associated with a localized metal-insulator transition in the NbOx bulk, and the bipolar RS derives from a redox at the tip of the localized filament at the WOx-NbOx interface. Such a simple metal-oxide-metal structure, with functionally separated bulk and interface effects, provides a fabrication advantage for future high-density cross-point memory devices.

Description

Keywords

Keywords: Bi-layer; Conceptual structures; Cross-point array; Evolution trend; High-density; Interface effect; Key parameters; Memory applications; Memory element; Memory switching; Qualitative model; Resistive switching; Switch element; Threshold switching; Metal

Citation

Source

Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0957-4484/22/47/475702

Restricted until

2037-12-31