An Examination of Three Common Assumptions Used to Simulate Recombination in Heavily Doped Silicon

McIntosh, Keith; Altermatt, Pietro P; Ratcliff, Thomas; Fong, Kean; Black, Lachlan; Baker-Finch, Simeon; Abbott, Malcolm

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An Examination of Three Common Assumptions Used to Simulate Recombination in Heavily Doped Silicon

Date

2013

Authors

McIntosh, Keith

Altermatt, Pietro P

Ratcliff, Thomas

Fong, Kean

Black, Lachlan

Baker-Finch, Simeon

Abbott, Malcolm

Publisher

WIP-Renewable Energies

URI

http://hdl.handle.net/1885/34031

Collections

ANU Research Publications

Source

28th European Photovoltaic Solar Energy Conference and Exhibition

Type

Conference paper

Access Statement

Open Access

DOI

10.4229/28thEUPVSEC2013-2CV.4.9

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An Examination of Three Common Assumptions Used to Simulate Recombination in Heavily Doped Silicon

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