Spontaneous emission mechanisms of GaInAsN/GaAs quantum dot systems
| dc.contributor.author | Wei, Z. F. | |
| dc.contributor.author | Xu, S. J. | |
| dc.contributor.author | Li, Q. | |
| dc.date.accessioned | 2015-12-03T03:16:36Z | |
| dc.date.available | 2015-12-03T03:16:36Z | |
| dc.date.issued | 2006-12-22 | |
| dc.description.abstract | Variable-temperature photoluminescence(PL)spectra taken on two different kinds of GaInAsN quantum dots(QDs), having different In and N compositions and thicknesses, have been investigated both experimentally and theoretically. It is found that the temperature dependence of the spontaneous emissions from both samples behaves differently. Adopting a localized-state luminescence model, the quantitative reproduction of the measured variable-temperature PLspectra reveals a dissimilarity in luminescence mechanisms of the two samples. These results enrich the present understanding of the luminescence mechanisms in the GaInAsN QD systems and are important for design and improvement of GaInAsN QDs based light-emitting devices. | en_AU |
| dc.description.sponsorship | This work was financially supported by HK-RGC CERG Grants under Contract No. HKU 7049/04P. | en_AU |
| dc.identifier.issn | 0021-8979 | en_AU |
| dc.identifier.uri | http://hdl.handle.net/1885/16999 | |
| dc.publisher | American Institute of Physics (AIP) | en_AU |
| dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 3/12/15). Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.2401051 | en_AU |
| dc.source | Journal of Applied Physics | en_AU |
| dc.title | Spontaneous emission mechanisms of GaInAsN/GaAs quantum dot systems | en_AU |
| dc.type | Journal article | en_AU |
| local.bibliographicCitation.issue | 12 | en_AU |
| local.bibliographicCitation.startpage | 124311 | en_AU |
| local.contributor.affiliation | Wei, Z. F., University of Hong Kong, Hong Kong | en_AU |
| local.contributor.affiliation | Xu, Shijie, University of Hong Kong, Hong Kong | en_AU |
| local.contributor.affiliation | Li, Qing, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | en_AU |
| local.contributor.authoruid | u4367518 | en_AU |
| local.description.notes | Imported from ARIES. At the time of publication the author Li was affiliated with Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong. | en_AU |
| local.identifier.absfor | 020501 | en_AU |
| local.identifier.ariespublication | u4367518xPUB1 | en_AU |
| local.identifier.citationvolume | 100 | en_AU |
| local.identifier.doi | 10.1063/1.2401051 | en_AU |
| local.identifier.uidSubmittedBy | u3488905 | en_AU |
| local.publisher.url | https://www.aip.org/ | en_AU |
| local.type.status | Published Version | en_AU |