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Hyperdoping silicon beyond sulfur: Structural and electronic properties with metal dopants

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Date

2017

Authors

Warrender, Jeffrey M.
Mathews, Jay
Hudspeth, Quentin
Chow, Philippe K.
Yang, Wenjie
Akey, Austin J.
Williams, James

Journal Title

Journal ISSN

Volume Title

Publisher

IEEE

Abstract

Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.

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Keywords

Citation

URI

http://hdl.handle.net/1885/205241

Collections

ANU Research Publications

Source

Summer Topicals Meeting Series, SUM 2017

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

10.1109/PHOSST.2017.8012683

Restricted until

2037-12-31

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01_Warrender_Hyperdoping_silicon_beyond_2017.pdf (272.54 KB)

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