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Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As

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Date

2013-12-02

Authors

Lind, A. G.
Rudawski, N. G.
Vito, N. J.
Hatem, C.
Ridgway, M. C.
Hengstebeck, R.
Yates, B. R.
Jones, K. S.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

A relationship between the electrical activation of Si in ion-implanted In₀.₅₃Ga₀.₄₇As and material microstructure after ion implantation is demonstrated. By altering specimen temperature during ion implantation to control material microstructure, it is advanced that increasing sub-amorphizing damage (point defects) from Si+ implantation results in enhanced electrical activation of Si in In₀.₅₃Ga₀.₄₇As by providing a greater number of possible sites for substitutional incorporation of Si into the crystal lattice upon subsequent annealing.

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Citation

URI

http://hdl.handle.net/1885/16161

Collections

ANU Research Publications

Source

Applied Physics Letters

Type

Journal article

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DOI

10.1063/1.4835097

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