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Raman spectroscopy of self-catalyzed GaAs 1-x Sb x nanowires grown on silicon

Date

Authors

Alarcon-Llado, Esther

Conesa-Boj, Sonia

Wallart, Xavier

Caroff, Philippe

Fontcuberta i Morral, Anna

Publisher

Institute of Physics Publishing

Abstract

Thanks to their wide band structure tunability, GaAs1-xSb x nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of thei

Keywords

Keywords: Energy dispersive x-ray; Material quality; Optical and electronic properties; Optical phonons; Plasmon coupling; Surface recombinations; Systematic study; Vibrational properties; Electronic properties; Gallium arsenide; Semiconducting gallium; Silicon; Te

URI

http://hdl.handle.net/1885/74834

Collections

ANU Research Publications

Source

Nanotechnology

Type

Journal article

DOI

10.1088/0957-4484/24/40/405707

Restricted until

2037-12-31

Downloads

File

Description

01_Alarcon-Llado_Raman_spectroscopy_of_2013.pdf (1.59 MB)

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