Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Abstract

We report the properties of thermally evaporated Ge11.5As24Se64.5 chalcogenide films ion implanted at energies of 2.25MeV with Erbium at concentrations up to 0.4 mol%. The effect of post implant annealing on the refractive index of the films and on the 4I13/2→4I15/2 Er transition was studied. Photoluminescence was found to increase significantly and a lifetime of 1.35 ms was obtained in films annealed at 180°C. Different apparent lifetimes for the 4I13/2→4I15/2 transition were obtained for 980nm and 1470nm pumps and the origins of this phenomenon are discussed. Show more