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Effect of irradiation temperature and ion flux on electrical isolation of GaN

Date

2002-04-01

Authors

Kucheyev, S. O.
Boudinov, H.
Williams, J. S.
Jagadish, C.
Li, G.

Journal Title

Journal ISSN

Volume Title

Publisher

American Institute of Physics (AIP)

Abstract

We study the evolution of sheet resistance of n-type GaN epilayers irradiated with MeV ¹H and ¹²C ions. Results show that both implantation temperature (varied from 77 up to 423 K) and ion beam flux affect the process of electrical isolation in the case of irradiation with ¹²C ions. This behavior is consistent with significant dynamic annealing occurring in GaN during MeV light-ion bombardment, which suggests a scenario where the centers responsible for electrical isolation are defect clusters or anti-site-related defects. Dynamic annealing causes simple ion-beam-generated Frenkel pairs to annihilate (or cluster) during irradiation at liquid nitrogen temperature and above. These beam-flux and irradiation-temperatureeffects are not observed during bombardment with lighter ¹H ions, which produce very dilute collision cascades. A qualitative model is proposed to explain temperature and flux effects in GaN in the MeV light-ion bombardment regime used for electrical isolation.

Description

Keywords

Keywords: Beam fluxes; Collision cascade; Defect cluster; Dynamic annealing; Electrical isolation; Frenkel pairs; GaN epilayers; Implantation temperature; Ion fluxes; Irradiation temperature; Liquid nitrogen temperature; Qualitative model; Defects; Heavy ions; Ion

Citation

Source

Journal of Applied Physics

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1063/1.1455154

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