Demonstration of c-Si Solar Cells with Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions

Abstract

Gallium oxide (Ga2O3 ) deposited by plasmaenhanced atomic layer deposition (PEALD) is shown to passivate crystalline silicon surfaces via a combination of a high negative charge and a reduction in the density of surface defects to below 1 × 1011 cm−2 eV−1 at midgap. The passivation, as determined by the injection-dependent excess carrier lifetime, is demonstrated to be commensurate to that of PEALD aluminum oxide. In addition, Ga2O3 is used as a gallium source in a laser-doping process, resulting in a device efficiency of 19.2% and an open-circuit voltage of 658 mV in a partial rear contact p-type cell design. Show more