Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells
dc.contributor.author | Wan, Yimao | |
dc.contributor.author | Bullock, James | |
dc.contributor.author | Cuevas, Andres | |
dc.date.accessioned | 2015-12-10T23:36:11Z | |
dc.date.issued | 2015 | |
dc.date.updated | 2015-12-10T11:51:59Z | |
dc.description.abstract | This letter reports effective passivation of crystalline silicon (c-Si) surfaces by thermal atomic layer deposited tantalum oxide (Ta<inf>2</inf>O<inf>5</inf>) underneath plasma enhanced chemical vapour deposited silicon nitride (SiN<inf>x</inf>). Cross-sectional transmission electron microscopy imaging shows an approximately 2 nm thick interfacial layer between Ta<inf>2</inf>O<inf>5</inf> and c-Si. Surface recombination velocities as low as 5.0 cm/s and 3.2 cm/s are attained on p-type 0.8 Ω·cm and n-type 1.0 Ω·cm c-Si wafers, respectively. Recombination current densities of 25 fA/cm2 and 68 fA/cm2 are measured on 150 Ω/sq boron-diffused p+ and 120 Ω/sq phosphorus-diffused n+ c-Si, respectively. Capacitance-voltage measurements reveal a negative fixed insulator charge density of -1.8 × 1012cm-2 for the Ta<inf>2</inf>O<inf>5</inf> film and -1.0 × 1012cm-2 for the Ta<inf>2</inf>O<inf>5</inf>/SiN<inf>x</inf> stack. The Ta<inf>2</inf>O<inf>5</inf>/SiN<inf>x</inf> stack is demonstrated to be an excellent candidate for surface passivation of high efficiency silicon solar cells. | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | http://hdl.handle.net/1885/70036 | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | Author/s retain copyright | en_AU |
dc.source | Applied Physics Letters | |
dc.title | Tantalum oxide/silicon nitride: A negatively charged surface passivation stack for silicon solar cells | |
dc.type | Journal article | |
dcterms.accessRights | Open Access | en_AU |
local.bibliographicCitation.issue | 20 | |
local.bibliographicCitation.lastpage | 4 | |
local.bibliographicCitation.startpage | 1 | |
local.contributor.affiliation | Wan, Yimao, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Bullock, James, College of Engineering and Computer Science, ANU | |
local.contributor.affiliation | Cuevas, Andres, College of Engineering and Computer Science, ANU | |
local.contributor.authoremail | u4793143@anu.edu.au | |
local.contributor.authoruid | Wan, Yimao, u4793143 | |
local.contributor.authoruid | Bullock, James, u4313019 | |
local.contributor.authoruid | Cuevas, Andres, u9308750 | |
local.description.notes | Imported from ARIES | |
local.identifier.absfor | 090699 - Electrical and Electronic Engineering not elsewhere classified | |
local.identifier.absfor | 090605 - Photodetectors, Optical Sensors and Solar Cells | |
local.identifier.ariespublication | a383154xPUB2202 | |
local.identifier.citationvolume | 106 | |
local.identifier.doi | 10.1063/1.4921416 | |
local.identifier.scopusID | 2-s2.0-84929574223 | |
local.identifier.uidSubmittedBy | a383154 | |
local.type.status | Published Version |
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