Damp-heat degradation and repair of oxide-passivated silicon

Date

Authors

McIntosh, Keith

DAI, Xi

Publisher

Wiley Interscience

Abstract

SiO2-passivated Si degrades when exposed to a 'damp-heat' atmosphere of 85% relative humidity and 85 °C. We find the effective surface recombination velocity at the SiO2/Si interface of phosphorus-diffused (111) Si to increase from 2200 to 11 000 cm/s af

Keywords

Keywords: Damp-heat exposure; Front surfaces; High-efficiency solar cells; Reliability testing; SiO 2 ; Surface recombination velocities; Degradation; Experiments; Passivation; Phosphorus; Silicon; Silicon compounds; Surface testing; Silicon oxides degradation; humidity; passivation; silicon; SiO 2

URI

http://hdl.handle.net/1885/56178

Collections

ANU Research Publications

Source

Physica Status Solidi A

Type

Journal article

DOI

10.1002/pssa.201026492

Restricted until

2037-12-31

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Description

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