Metal interface formation studied by high-energy reflection energy loss spectroscopy and electron Rutherford backscattering
Date
2007
Authors
Vos, Maarten
Went, Michael
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Publisher
Elsevier
Abstract
We demonstrate that high-energy, high-resolution reflection electron energy loss spectroscopy can provide unique insights into interface formation, especially for the case where an extended interface is formed. By changing the geometry and/or electron energy the electronic structure can be probed over a range of thicknesses (from 10s of Å to more than 1000 Å). At the same time one resolves the elastically scattered electrons into different components, corresponding to scattering of atoms with different mass (so-called 'electron Rutherford backscattering'). Thus these high-energy REELS/elastic scattering experiments obtain information on both the electronic structure and the atomic composition of the overlayer formed.
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Keywords: Electron energy analyzers; Electron scattering; Interfaces (materials); Optical resolving power; Rutherford backscattering spectroscopy; Thin films; Elastic electron scattering; Interface formation; Plasmon excitation; Reflection electron energy loss spec Elastic electron scattering; Plasmon excitation; Reflection electron energy loss spectroscopy; Thin films
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Source
Surface Science
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Journal article
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2037-12-31
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