Stoichiometric Low Loss Tellurium Oxide Thin Films for Photonic Applications

Date

Authors

Vu, Khu
Madden, Steve
Luther-Davies, Barry
Bulla, Douglas

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Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

Stoichiometric low loss Tellurium Oxide, TeO2, films have been produced by reactive RF sputtering. TeO2 films with propagation loss below 0.1dB/cm at 1550nm have been achieved in as deposited films.

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Citation

Source

Proceedings of OECC/ACOFT 2008

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Restricted until

2037-12-31